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Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Pd - Power Dissipation

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (KRW) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Technology	Mounting Style	Package / Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Packaging
	MOSFETs HIGH POWER_NEW IPW65R029CFD7XKSA1 Infineon Technologies 1: ₩18,579.6 126In Stock	Mfr. Part # IPW65R029CFD7XKSA1 Mouser Part # 726-IPW65R029CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	126In Stock	₩18,579.6 ₩12,667.2 ₩12,339.6	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R060CFD7XKSA1 Infineon Technologies 1: ₩14,320.8 268In Stock NRND	Mfr. Part # IPW65R060CFD7XKSA1 Mouser Part # 726-IPW65R060CFD7SA1 NRND	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	268In Stock	₩14,320.8 ₩8,439.6 ₩7,113.6 ₩6,895.2 ₩6,489.6	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	3.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R041CFD7XKSA1 Infineon Technologies 1: ₩15,568.8 300In Stock	Mfr. Part # IPP65R041CFD7XKSA1 Mouser Part # 726-IPP65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	300In Stock	₩15,568.8 ₩10,639.2 ₩8,782.8 ₩7,862.4 ₩7,394.4	Min.: 1 Mult.: 1			Si	Through Hole		N-Channel	1 Channel	650 V	50 A	41 mOhms	20 V	4.5 V	102 nC	- 55 C	+ 150 C	227 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R041CFD7XKSA1 Infineon Technologies 1: ₩17,050.8 284In Stock 720On Order	Mfr. Part # IPW65R041CFD7XKSA1 Mouser Part # 726-IPW65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	284In Stock 720On Order	₩17,050.8 ₩9,282 ₩8,595.6 ₩8,548.8	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	68.5 A	41 mOhms	20 V	4 V	102 nC	- 55 C	+ 150 C	500 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPZA65R029CFD7XKSA1 Infineon Technologies 1: ₩23,493.6 181In Stock	Mfr. Part # IPZA65R029CFD7XKSA1 Mouser Part # 726-IPZA65R029CFD7XK	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	181In Stock	₩23,493.6 ₩13,228.8 ₩12,994.8	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-4	N-Channel	1 Channel	650 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R060CFD7XKSA1 Infineon Technologies 1: ₩12,651.6 41In Stock 500Expected 12/10/2026	Mfr. Part # IPP65R060CFD7XKSA1 Mouser Part # 726-IPP65R060CFD7SA1	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	41In Stock 500Expected 12/10/2026	₩12,651.6 ₩6,832.8 ₩6,271.2 ₩5,756.4	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	4.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube