RBRxx60ANZ Low VF Type Schottky Barrier Diodes

ROHM Semiconductor RBRxx60ANZ Schottky Barrier Diodes are cathode common dual type diodes that come in a TO-220FN package. These diodes are manufactured using silicon epitaxial planar type construction and operate at -55°C to +150°C temperature range. ROHM Semiconductor RBRxx60ANZ barrier diodes offer low VF and high reliability. These Schottky barrier diodes are ideally suited for switching power supplies and general rectification.

Results: 3
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Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Packaging
ROHM Semiconductor Schottky Diodes & Rectifiers Schottky Barrier Diode Low VF, 60V, 10A, ITO-220AB
Datasheet
Non-Stocked Lead-Time 12 Weeks
₩2,854.8
₩1,368.1
₩1,223
₩967.2
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Min.: 1
Mult.: 1
Schottky Diodes Through Hole TO-220FN-3 Dual Anode Common Cathode Si 10 A 60 V 650 mV 50 A 200 uA + 150 C Tube
ROHM Semiconductor Schottky Diodes & Rectifiers Schottky Barrier Diode Low VF, 60V, 20A, ITO-220AB
Datasheet
Non-Stocked Lead-Time 12 Weeks
₩3,447.6
₩2,917.2
₩2,464.8
₩2,028
View
Min.: 1
Mult.: 1
Schottky Diodes Through Hole TO-220FN-3 Dual Anode Common Cathode Si 20 A 60 V 640 mV 100 A 400 uA + 150 C Tube
ROHM Semiconductor Schottky Diodes & Rectifiers Schottky Barrier Diode Low VF, 60V, 30A, ITO-220AB
Datasheet
Non-Stocked Lead-Time 12 Weeks
₩1,326
₩1,282.3
₩1,224.6
Min.: 1,000
Mult.: 1,000
Schottky Diodes Through Hole TO-220FN-3 Dual Anode Common Cathode Si 30 A 60 V 670 mV 100 A 600 uA + 150 C Tube