SiC MOSFETs – Mouser Korea, Republic of

.hide-partial { max-height: none; } .show-more { display: none; }

650V & 1200V 3rd Gen Silicon Carbide MOSFETs

Toshiba 650V and 1200V 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V and 800V AC input AC-DC power supplies, photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These Toshiba MOSFETs make significant contributions to reducing power consumption and improving power density due to SiC technology. This technology allows for higher voltages, faster switching, and lower on-resistance. The design offers enhanced reliability in addition to low input capacitance, common gate-input charge, and a drain-to-source on-resistance as low as 15mΩ.

.catnav-wrapper { height: auto; overflow: visible; } .catalog-nav-tabs ul { white-space: normal; }

Results: 24

Applied Filters:

Mounting Style

Package / Case

Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Qg - Gate Charge

Minimum Operating Temperature

Pd - Power Dissipation

Reset All

Search within results

In Stock

Normally Stocked

Active

New Products

RoHS Compliant

.search-refine-wrapper { display: inline-block; min-width: 100%; } .scroll-body { overflow-x: visible; } .search-table-wrapper { overflow: visible; } .hide-partial { max-height: none; } .show-more { display: none; }

Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (KRW) Filter the results in the table by unit price based on your quantity.	Qty.	Mounting Style	Package / Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm TW015Z65C,S1F Toshiba 1: ₩26,863.2 132In Stock	Mfr. Part # TW015Z65C,S1F Mouser Part # 757-TW015Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	132In Stock	₩26,863.2 ₩22,417.2 ₩15,615.6 ₩15,459.6	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	100 A	15 mOhms	- 10 V, + 25 V	5 V	128 nC		+ 175 C	342 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW031V65C,LQ Toshiba 1: ₩18,142.8 2,500In Stock New Product	Mfr. Part # TW031V65C,LQ Mouser Part # 757-TW031V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2,500In Stock	Cut Tape ₩18,142.8 ₩13,447.2 Reel ₩13,447.2	Min.: 1 Mult.: 1 : 2,500	SMD/SMT	DFN-5	1 Channel	650 V	53 A	45 mOhms	- 10 V, 25 V	5 V	65 nC		+ 175 C	156 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW054V65C,LQ Toshiba 1: ₩14,180.4 2,480In Stock New Product	Mfr. Part # TW054V65C,LQ Mouser Part # 757-TW054V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2,480In Stock	Cut Tape ₩14,180.4 ₩9,734.4 Reel ₩9,734.4	Min.: 1 Mult.: 1 : 2,500	SMD/SMT	DFN-5	1 Channel	650 V	36 A	81 mOhms	- 10 V, 25 V	5 V	41 nC		+ 175 C	132 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW092V65C,LQ Toshiba 1: ₩11,778 2,493In Stock New Product	Mfr. Part # TW092V65C,LQ Mouser Part # 757-TW092V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2,493In Stock	Cut Tape ₩11,778 ₩7,956 ₩7,597.2 Reel ₩7,597.2	Min.: 1 Mult.: 1 : 2,500	SMD/SMT	DFN-5	1 Channel	650 V	27 A	136 mOhms	- 10 V, 25 V	5 V	28 nC		+ 175 C	111 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW123V65C,LQ Toshiba 1: ₩9,344.4 2,500In Stock New Product	Mfr. Part # TW123V65C,LQ Mouser Part # 757-TW123V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2,500In Stock	Cut Tape ₩9,344.4 ₩5,584.8 Reel ₩5,584.8	Min.: 1 Mult.: 1 : 2,500	SMD/SMT	DFN-5	1 Channel	650 V	18 A	183 mOhms	- 10 V, 25 V	5 V	21 nC		+ 175 C	76 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm TW030Z120C,S1F Toshiba 1: ₩18,860.4 27In Stock	Mfr. Part # TW030Z120C,S1F Mouser Part # 757-TW030Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	27In Stock	₩18,860.4 ₩14,149.2	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	60 A	30 mOhms	- 10 V, + 25 V	5 V	82 nC		+ 175 C	249 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm TW060Z120C,S1F Toshiba 1: ₩16,411.2 31In Stock	Mfr. Part # TW060Z120C,S1F Mouser Part # 757-TW060Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	31In Stock	₩16,411.2 ₩12,402 ₩11,793.6	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	36 A	60 mOhms	- 10 V, + 25 V	5 V	46 nC		+ 175 C	170 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm TW140Z120C,S1F Toshiba 1: ₩14,367.6 61In Stock	Mfr. Part # TW140Z120C,S1F Mouser Part # 757-TW140Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	61In Stock	₩14,367.6 ₩9,828	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	20 A	140 mOhms	- 10 V, + 25 V	5 V	24 nC		+ 175 C	107 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm TW045Z120C,S1F Toshiba 1: ₩17,643.6 14In Stock 30Expected 12/4/2026	Mfr. Part # TW045Z120C,S1F Mouser Part # 757-TW045Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	14In Stock 30Expected 12/4/2026	₩17,643.6 ₩12,979.2	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	40 A	45 mOhms	- 10 V, + 25 V	5 V	57 nC		+ 175 C	182 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm TW015N120C,S1F Toshiba 1: ₩50,497.2 28In Stock	Mfr. Part # TW015N120C,S1F Mouser Part # 757-TW015N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	28In Stock	₩50,497.2 ₩36,628.8 ₩28,360.8 ₩27,846 Quote Quote	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	100 A	182 mOhms	- 10 V, + 25 V	5 V	158 nC	- 55 C	+ 175 C	431 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm TW015N65C,S1F Toshiba 1: ₩26,863.2 41In Stock	Mfr. Part # TW015N65C,S1F Mouser Part # 757-TW015N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	41In Stock	₩26,863.2 ₩22,417.2 ₩15,459.6	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	100 A	21 mOhms	- 10 V, + 25 V	5 V	128 nC	- 55 C	+ 175 C	342 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm TW015Z120C,S1F Toshiba 1: ₩30,997.2 12In Stock 60Expected 10/16/2026	Mfr. Part # TW015Z120C,S1F Mouser Part # 757-TW015Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	12In Stock 60Expected 10/16/2026	₩30,997.2 ₩26,566.8	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	100 A	15 mOhms	- 10 V, + 25 V	5 V	158 nC		+ 175 C	431 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm TW027N65C,S1F Toshiba 1: ₩16,114.8 2In Stock	Mfr. Part # TW027N65C,S1F Mouser Part # 757-TW027N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	2In Stock	₩16,114.8 ₩12,620.4 ₩11,044.8	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	58 A	37 mOhms	- 10 V, + 25 V	5 V	65 nC	- 55 C	+ 175 C	156 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm TW030N120C,S1F Toshiba 1: ₩19,718.4 67In Stock	Mfr. Part # TW030N120C,S1F Mouser Part # 757-TW030N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	67In Stock	₩19,718.4 ₩11,278.8 ₩10,452 ₩9,765.6	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV		40 mOhms	- 10 V, + 25 V	5 V	82 nC	- 55 C	+ 175 C	249 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm TW045N120C,S1F Toshiba 1: ₩21,184.8 92In Stock	Mfr. Part # TW045N120C,S1F Mouser Part # 757-TW045N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	92In Stock	₩21,184.8 ₩12,979.2	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	40 A	182 mOhms	- 10 V, + 25 V	5 V	57 nC	- 55 C	+ 175 C	182 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm TW048Z65C,S1F Toshiba 1: ₩12,526.8 32In Stock	Mfr. Part # TW048Z65C,S1F Mouser Part # 757-TW048Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	32In Stock	₩12,526.8 ₩8,252.4	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	40 A	48 mOhms	- 10 V, + 25 V	5 V	41 nC		+ 175 C	132 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm TW060N120C,S1F Toshiba 1: ₩16,411.2 189In Stock	Mfr. Part # TW060N120C,S1F Mouser Part # 757-TW060N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	189In Stock	₩16,411.2 ₩12,885.6 ₩11,793.6	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	36 A	182 mOhms	- 10 V, + 25 V	5 V	46 nC	- 55 C	+ 175 C	170 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm TW083N65C,S1F Toshiba 1: ₩12,043.2 15In Stock	Mfr. Part # TW083N65C,S1F Mouser Part # 757-TW083N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	15In Stock	₩12,043.2 ₩7,051.2 ₩5,694 ₩5,226 ₩4,960.8	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	20 A	145 mOhms	- 10 V, + 25 V	5 V	21 nC	- 55 C	+ 175 C	76 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm TW083Z65C,S1F Toshiba 1: ₩11,388 25In Stock	Mfr. Part # TW083Z65C,S1F Mouser Part # 757-TW083Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	25In Stock	₩11,388 ₩7,269.6	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	30 A	83 mOhms	- 10 V, + 25 V	5 V	28 nC		+ 175 C	111 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm TW107N65C,S1F Toshiba 1: ₩11,700 19In Stock	Mfr. Part # TW107N65C,S1F Mouser Part # 757-TW107N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	19In Stock	₩11,700 ₩6,099.6 ₩5,818.8	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	20 A	113 mOhms	- 10 V, + 25 V	5 V	28 nC	- 55 C	+ 175 C	111 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm TW107Z65C,S1F Toshiba 1: ₩9,640.8 40In Stock	Mfr. Part # TW107Z65C,S1F Mouser Part # 757-TW107Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	40In Stock	₩9,640.8 ₩6,552 ₩5,818.8	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	20 A	107 mOhms	- 10 V, + 25 V	5 V	21 nC		+ 175 C	76 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm TW140N120C,S1F Toshiba 1: ₩14,274 210Expected 1/15/2027	Mfr. Part # TW140N120C,S1F Mouser Part # 757-TW140N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	210Expected 1/15/2027	₩14,274 ₩7,644 ₩7,035.6	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	20 A	182 mOhms	- 10 V, + 25 V	5 V	24 nC	- 55 C	+ 175 C	107 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm TW027Z65C,S1F Toshiba 1: ₩16,083.6 Non-Stocked Lead-Time 24 Weeks	Mfr. Part # TW027Z65C,S1F Mouser Part # 757-TW027Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	Non-Stocked Lead-Time 24 Weeks	₩16,083.6 ₩11,372.4 ₩9,469.2 ₩8,439.6 ₩7,893.6	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	58 A	27 mOhms	- 10 V, + 25 V	5 V	65 nC		+ 175 C	156 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm TW048N65C,S1F Toshiba 1: ₩12,542.4 Non-Stocked Lead-Time 24 Weeks	Mfr. Part # TW048N65C,S1F Mouser Part # 757-TW048N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	Non-Stocked Lead-Time 24 Weeks	₩12,542.4 ₩8,829.6 ₩7,144.8 ₩6,349.2 ₩5,616	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	40 A	65 mOhms	- 10 V, + 25 V	5 V	41 nC	- 55 C	+ 175 C	132 W	Enhancement

650V & 1200V 3rd Gen Silicon Carbide MOSFETs

Applied Filters:

Customer Service Office

Company

Resources

Support