GANSPIN611 GaN High-Power Density Half-Bridge

STMicroelectronics GANSPIN611 GaN High-Power Density Half-Bridge is an advanced power system-in-package integrating two enhancement-mode GaN transistors in a half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver. The integrated power GaNs have an RDS(ON) of 138mΩ and a 650V drain-source breakdown voltage, while the integrated bootstrap diode can easily supply the high side of the embedded gate driver.

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Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Type
Output Current
Operating Supply Current
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
STMicroelectronics Motor / Motion / Ignition Controllers & Drivers 650 V enhancement mode GaN high-power density half-bridge with high-voltage driver
Datasheet
916In Stock
Cut Tape
₩13,500.1
₩10,512.6
₩9,765.8
₩8,934.3
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Reel
₩7,722.4
MouseReel Available
Min.: 1
Mult.: 1
: 3,000
Half-bridge Driver Half-bridge with High-voltage Driver 10 A 900 uA - 40 C + 125 C SMD/SMT QFN-35 Reel, Cut Tape, MouseReel
STMicroelectronics Motor / Motion / Ignition Controllers & Drivers 650 V enhancement mode GaN high-power density half-bridge with high-voltage driver
Datasheet
Non-Stocked Lead-Time 52 Weeks
₩8,835.7
Min.: 1,560
Mult.: 1,560
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