SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

Results: 24
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Minimum Operating Temperature Maximum Operating Temperature Vr - Reverse Voltage Packaging
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY 67In Stock
₩6,708
₩3,369.6
₩2,745.6
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 79 A 500 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A 29In Stock
₩9,391.2
₩6,162
₩3,946.8
₩3,369.6
Min.: 1
Mult.: 1
Through Hole TO-247-3 Dual Anode Common Cathode 16 A 650 V 1.6 V 130 A 400 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 6A RDL SIC SKY 138In Stock
₩5,101.2
₩2,620.8
₩2,246.4
₩1,872
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 6 A 650 V 1.45 V 52 A 300 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes V=650 IF=8A 7In Stock
₩11,559.6
₩7,581.6
₩5,569.2
₩4,960.8
₩4,399.2
Min.: 1
Mult.: 1
Through Hole TO-220-2 Single 8 A 650 V 1.45 V 69 A 400 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 30A RDL SIC SKY 35In Stock
₩26,691.6
₩15,210
₩15,147.6
Min.: 1
Mult.: 1
Through Hole TO-247-2L Single 83 A 1.2 kV 1.27 V 1.63 kA 2.8 uA + 175 C
Toshiba SiC Schottky Diodes SiC Schottky barrier diode;TO-247-2L; Vrrm=1200V; IF=40A; PD=454W 48In Stock
₩30,685.2
₩22,495.2
Min.: 1
Mult.: 1
Through Hole TO-247-2L Single 102 A 1.2 kV 1.27 V 1.91 kA 3.6 uA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 61A RDL SIC SKY 48In Stock
30Expected 4/21/2027
₩17,581.2
₩12,433.2
₩9,469.2
₩8,907.6
₩8,736
Min.: 1
Mult.: 1
Through Hole TO-247-2 Single 61 A 1.2 kV 1.27 V 1.08 kA 2 uA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 38A RDL SIC SKY 26In Stock
₩11,996.4
₩7,706.4
Min.: 1
Mult.: 1
Through Hole TO-247-2 Single 38 A 1.2 kV 1.27 V 690 A 1 uA - 55 C + 175 C Tube

Toshiba SiC Schottky Diodes RECT 1.2KV 18A RDL SIC SKY 36In Stock
₩12,214.8
₩7,878
Min.: 1
Mult.: 1
Through Hole TO-247-3 Common Anode 36 A 1.2 kV 1.27 V 820 A 500 nA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A 11In Stock
₩7,737.6
₩4,539.6
₩3,541.2
₩2,979.6
Min.: 1
Mult.: 1
Through Hole TO-247-3 Dual Anode Common Cathode 12 A 650 V 1.6 V 104 A 300 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY 15In Stock
₩14,710.8
₩10,093.2
Min.: 1
Mult.: 1
Through Hole TO-247-2 Single 50 A 1.2 kV 1.27 V 940 A 1.4 uA - 55 C + 175 C Tube

Toshiba SiC Schottky Diodes RECT 1.2KV 25A RDL SIC SKY 15In Stock
₩14,913.6
₩10,186.8
₩7,690.8
₩7,222.8
₩7,082.4
Min.: 1
Mult.: 1
Through Hole TO-247-3 Common Anode 50 A 1.2 kV 1.27 V 1.06 kA 700 nA - 55 C + 175 C Tube

Toshiba SiC Schottky Diodes RECT 1.2KV 32A RDL SIC SKY 24In Stock
₩17,674.8
₩12,838.8
Min.: 1
Mult.: 1
Through Hole TO-247-3 Common Anode 64 A 1.2 kV 1.27 V 1.38 kA 1 uA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY 60In Stock
₩9,594
₩5,709.6
Min.: 1
Mult.: 1
Through Hole TO-247-3 Dual Anode Common Cathode 20 A 650 V 1.6 V 158 A 500 nA + 175 C Tube
Toshiba SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=24A 300In Stock
₩10,904.4
₩7,113.6
₩6,520.8
₩4,836
₩4,492.8
Min.: 1
Mult.: 1
Through Hole TO-247-3 Dual Anode Common Cathode 24 A 650 V 1.6 V 184 A 600 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 2A RDL SIC SKY 308In Stock
450Expected 11/6/2026
₩2,293.2
₩1,078
₩956.3
₩798.7
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 2 A 650 V 1.45 V 21 A 200 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes RECT 650V 4A RDL SIC SKY 105In Stock
₩4,212
₩2,043.6
₩1,809.6
₩1,450.8
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 37 A 200 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes V=650 IF=6A 96In Stock
₩5,413.2
₩2,714.4
₩2,433.6
₩1,965.6
Min.: 1
Mult.: 1
Through Hole TO-220-2 Single 6 A 650 V 1.45 V 55 A 300 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY Non-Stocked Lead-Time 24 Weeks
₩11,013.6
₩7,363.2
₩5,928
₩5,257.2
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 83 A 500 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes RECT 650V 12A RDL SIC SKY Non-Stocked Lead-Time 24 Weeks
₩6,224.4
₩3,151.2
₩2,839.2
₩2,324.4
₩2,262
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 92 A 600 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes RECT 650V 12A RDL SIC SKY Non-Stocked Lead-Time 24 Weeks
₩3,385.2
₩2,152.8
₩1,452.4
₩1,176.2
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 97 A 600 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes RECT 650V 3A RDL SIC SKY Non-Stocked Lead-Time 24 Weeks
₩3,837.6
₩2,464.8
₩1,669.2
₩1,425.8
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 3 A 650 V 1.45 V 27 A 200 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes RECT 650V 4A RDL SIC SKY Non-Stocked Lead-Time 24 Weeks
₩4,461.6
₩2,854.8
₩1,950
₩1,653.6
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 39 A 200 nA + 175 C 650 V Tube
Toshiba SiC Schottky Diodes RECT 650V 8A RDL SIC SKY Non-Stocked Lead-Time 24 Weeks
₩4,898.4
₩3,182.4
₩2,184
₩1,825.2
₩1,700.4
Min.: 1
Mult.: 1
Through Hole TO-220F-2L Single 8 A 650 V 1.45 V 65 A 400 nA + 175 C 650 V Tube