Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

Results: 8
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Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Bourns IGBTs IGBT Discrete 600V, 5A in TO-252
Datasheet
24,137In Stock
Cut Tape
₩3,478.8
₩2,230.8
₩1,505.4
₩1,199.6
₩1,099.8
Reel
₩1,018.7
MouseReel Available
Min.: 1
Mult.: 1
: 2,500
Si TO-252-3 SMD/SMT Single 600 V 1.5 V - 30 V, 30 V 10 A 82 W - 55 C + 150 C BID Reel, Cut Tape, MouseReel
Bourns IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
Datasheet
5,797In Stock
₩12,714
₩7,363.2
₩6,177.6
₩5,803.2
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
Datasheet
2,780In Stock
₩9,094.8
₩5,148
₩4,336.8
₩4,180.8
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.35 V 20 V 80 A 230 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
Datasheet
2,967In Stock
₩9,016.8
₩5,148
₩4,336.8
₩4,321.2
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 80 A 300 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
Datasheet
2,773In Stock
₩11,746.8
₩7,363.2
₩6,177.6
₩5,803.2
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.42 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 600V, 30A in TO-247
Datasheet
3,612In Stock
₩8,580
₩5,132.4
₩4,118.4
₩3,603.6
₩3,510
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 50A in TO-247
Datasheet
5In Stock
4,200Expected 1/8/2027
₩10,545.6
₩6,302.4
₩5,257.2
₩4,492.8
₩4,477.2
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 100 A 416 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 600V, 30A in TO-247N
Datasheet
Non-Stocked Lead-Time 16 Weeks
₩8,814
₩5,366.4
₩4,305.6
₩3,135.6
Min.: 3,000
Mult.: 600
Si TO-247N-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube