1200V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs). These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 1200V SiC MOSFETs include 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. These MOSFETs offer a low RDS(ON), superior power density, and cool-running performance. The 1200V SiC MOSFETs achieve up to 95.5% peak efficiency in EV charging and power conversion systems. These MOSFETs are ideal for applications, including EVs and DC-DC converters.

결과: 15
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 채널 모드
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 749재고 상태
컷 테이프
₩43,431.5
₩32,256.6
₩31,509.7
₩31,467.4
릴
₩26,986.2
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 888재고 상태
컷 테이프
₩38,767.1
₩28,085.4
₩26,493
₩25,633.3
릴
₩21,772.1
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1,525재고 상태
컷 테이프
₩27,662.6
₩20,052.9
₩18,009.6
₩17,910.9
릴
₩15,754.9
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1,485재고 상태
컷 테이프
₩12,837.8
₩9,328.9
₩8,102.9
₩7,229.2
릴
₩6,862.8
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET 428재고 상태
₩45,179
₩44,587.1
₩29,734.1
₩29,001.3
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 496재고 상태
₩39,683.1
₩39,077.1
₩25,182.4
₩24,012.8
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 224재고 상태
컷 테이프
₩32,157.9
₩23,125
₩21,152.1
릴
₩17,953.2
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247재고 상태
₩31,974.7
₩31,256.1
₩19,813.4
₩18,587.3
₩18,249.1
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 761재고 상태
컷 테이프
₩21,870.8
₩15,895.8
₩13,697.4
₩13,655.1
₩13,641.1
릴
₩11,724.5
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1,400재고 상태
₩21,560.8
₩21,067.5
₩13,035.1
₩12,696.9
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-263-7 G3F SiC MOSFET 1,550재고 상태
컷 테이프
₩17,460
₩12,415.1
₩10,216.7
₩10,047.6
릴
₩9,455.7
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-247-4 G3F SiC MOSFET 423재고 상태
₩17,417.7
₩17,192.2
₩10,442.2
₩9,695.3
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-263-7 G3F SiC MOSFET 562재고 상태
컷 테이프
₩15,628
₩11,132.7
₩9,089.3
₩8,751.1
릴
₩7,496.9
최소: 1
배수: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-247-4 G3F SiC MOSFET 1,635재고 상태
₩16,276.3
₩16,177.6
₩9,258.4
₩8,582
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 35 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 리드 타임 26 주
₩28,606.8
₩28,254.5
₩16,966.8
₩16,445.4
₩15,881.7
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 34 mOhms Enhancement