iS20M028S1C-7SR

Name: iDEAL Semiconductor iS20M028S1C-7SR
Brand: iDEAL Semiconductor
SKU: 25-IS20M028S1C-7SR
Price: 5143 KRW
Availability: InStock

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Mouser #:

25-IS20M028S1C-7SR

Mfr. #:

iS20M028S1C-7SR

Mfr.:

iDEAL Semiconductor

Description:

MOSFETs

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

iS20M028S1C-7SR Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	iDEAL Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PDFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	25 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	27.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	SuperQ
Packaging:	Reel
Packaging:	Cut Tape
Brand:	iDEAL Semiconductor
Configuration:	Single
Fall Time:	12.7 ns
Forward Transconductance - Min:	14 S
Pin Count:	8
Product Type:	MOSFETs
Rise Time:	2 ns
Factory Pack Quantity:	100
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	9.3 ns

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Filter Document:

Datasheet

iS20M028S1C-7SR Datasheet (PDF)

Product Catalogs

Aerospace and Defense (PDF)

Compliance Codes

KRHTS:: 8541299000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET

iDEAL Semi iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET is designed for SMPS and high-efficiency motor drives. The 200V MOSFET features ultra-low conduction and switching losses in a robust PDFN package measuring 5mm x 6mm. The iDEAL Semi iS20M028S1C SuperQ 200V N-Ch Power MOSFET supplies superior R_DS(on) and Q_SW, while minimizing heat dissipation at both full and partial loads.

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Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

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iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

Delivers ultra-low conduction and switching losses in a robust TO-220 package.

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iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs

Features low switching losses, Q_SW, and EOSS, suitable for high-efficiency SMPS and motor drives.

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iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET

Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

Learn More

In Stock: 294

Stock:: 294 Can Ship Immediately

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Factory Lead-Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (KRW)

Qty.	Unit Price	Ext. Price
	₩5,143.6	₩5,144
	₩3,353.9	₩33,539
Full Reel (Order in multiples of 100)
	₩2,339.3	₩233,930
	₩1,958.8	₩979,400
	₩1,817.9	₩1,817,900
	₩1,705.1	₩4,262,750

iS20M028S1C-7SR

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Mfr.: iDEAL Semiconductor

Description: MOSFETs

Specifications

Documents (2)

Datasheet

Product Catalogs

Product & Trade Compliance

More Information

iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET

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Mfr.:

iDEAL Semiconductor

Description:

MOSFETs

FEATURED PRODUCTS

IDEAL SEMICONDUCTOR