TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Results: 12
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Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Packaging
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8
Datasheet
2,134In Stock
Cut Tape
₩4,777.2
₩2,437.9
₩2,156.1
₩1,874.2
Reel
₩1,620.6
View
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A DFN8x8
Datasheet
6,771In Stock
Cut Tape
₩3,283.4
₩1,592.4
₩1,437.4
₩1,375.4
Reel
₩1,375.4
₩941.3
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A DFN8x8
Datasheet
4,789In Stock
Cut Tape
₩3,889.4
₩1,916.5
₩1,719.2
₩1,578.3
Reel
₩1,578.3
₩1,182.3
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8
Datasheet
1,933In Stock
Cut Tape
₩5,340.9
₩2,776.1
₩2,452
₩2,184.3
Reel
₩1,691
₩1,648.8
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A TO-220-2L
Datasheet
208In Stock
₩3,353.9
₩1,634.7
₩1,578.3
₩1,135.8
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 3A TO-220-2L
Datasheet
1In Stock
₩3,579.4
₩1,437.4
₩1,281
₩1,016
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L
Datasheet
213In Stock
₩5,369.1
₩3,255.3
₩2,437.9
₩1,987
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A DFN8x8
Datasheet
1,033In Stock
Cut Tape
₩5,721.4
₩3,142.5
₩2,691.6
₩2,466.1
Reel
₩1,972.9
₩1,888.3
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L
Datasheet
50In Stock
₩4,904
₩2,466.1
₩2,212.4
₩1,789.7
View
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A TO-220-2L
Datasheet
127In Stock
₩3,875.3
₩1,902.4
₩1,888.3
₩1,369.7
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A TO-220-2L
Datasheet
21In Stock
₩4,664.5
₩2,311.1
₩2,071.5
₩1,676.9
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 2A TO-220-2L
Datasheet
172On Order
₩2,663.4
₩1,269.7
₩1,133
₩894.8
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube