CoolMOS® Power Transistors

Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 8 Weeks
₩6,693.7
₩3,452.5
₩3,128.4
₩2,564.7
₩2,522.5
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 1 Channel 650 V 22.4 A 351 mOhms 20 V 4 V 8 nC - 55 C + 150 C 34.7 W Tube
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 8 Weeks
Cut Tape
₩10,047.6
₩5,340.9
₩4,889.9
₩4,298.1
Reel
₩4,058.5
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 257 mOhms 20 V 4 V 118 nC - 55 C + 150 C 277.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 23 Weeks
₩5,862.3
₩3,072.1
₩2,776.1
₩2,254.7
View
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.5 A 190 mOhms 20 V 3.5 V 68 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 41 Weeks
₩13,288.8
₩8,088.8
₩6,820.5
₩6,355.5
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 43.3 A 80 mOhms 20 V 4 V 167 nC - 55 C + 150 C 391 W Enhancement Tube