Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

반도체의 유형

카테고리 보기 변경
결과: 51
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 86재고 상태
₩8,845.2
₩8,486.4
₩7,628.4
최소: 1
배수: 1
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 3,920재고 상태
컷 테이프
₩15,459.6
₩14,383.2
₩13,946.4
₩13,603.2
₩13,275.6
₩13,275.6
최소: 1
배수: 1
: 2,500
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 369재고 상태
₩11,856
₩11,029.2
₩10,701.6
₩10,202.4
₩9,952.8
최소: 1
배수: 1
ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 514재고 상태
₩13,213.2
₩12,308.4
₩11,934
₩11,388
최소: 1
배수: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS 755재고 상태
₩9,032.4
₩8,424
₩8,174.4
₩7,971.6
₩7,706.4
최소: 1
배수: 1
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 480재고 상태
₩10,514.4
₩9,796.8
₩9,500.4
₩9,282
최소: 1
배수: 1
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS 310재고 상태
₩18,330
₩17,035.2
₩16,504.8
₩16,114.8
₩15,397.2
최소: 1
배수: 1
ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS 480재고 상태
₩12,152.4
₩11,310
₩10,966.8
₩10,701.6
최소: 1
배수: 1
ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns 190재고 상태
₩11,341.2
₩10,561.2
₩10,233.6
₩9,999.6
₩9,750
최소: 1
배수: 1
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885재고 상태
₩11,029.2
₩10,264.8
₩9,952.8
₩9,500.4
₩9,282
최소: 1
배수: 1
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 631재고 상태
₩8,486.4
₩7,924.8
₩7,690.8
최소: 1
배수: 1
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 755재고 상태
₩8,486.4
₩7,924.8
₩7,690.8
₩7,503.6
₩7,332
최소: 1
배수: 1
ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450재고 상태
₩8,236.8
₩7,690.8
₩7,456.8
₩7,285.2
₩7,113.6
최소: 1
배수: 1
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1,657재고 상태
₩8,486.4
₩7,924.8
₩7,690.8
₩7,503.6
₩7,332
최소: 1
배수: 1
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 214재고 상태
800예상 2026-10-09
₩8,034
₩7,488
₩7,269.6
₩7,098
₩6,910.8
최소: 1
배수: 1
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 130재고 상태
₩7,690.8
₩7,176
₩6,957.6
₩6,801.6
₩6,630
최소: 1
배수: 1
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 134재고 상태
₩8,923.2
₩8,330.4
₩8,080.8
₩7,893.6
₩7,690.8
최소: 1
배수: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS 496재고 상태
컷 테이프
₩11,263.2
₩10,483.2
₩10,171.2
₩9,703.2
₩9,469.2
₩9,469.2
최소: 1
배수: 1
: 1,000
ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 380재고 상태
₩9,562.8
₩8,907.6
₩8,642.4
₩8,439.6
최소: 1
배수: 1
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 2,259재고 상태
컷 테이프
₩12,308.4
₩11,450.4
₩11,107.2
₩10,592.4
₩10,342.8
₩10,342.8
최소: 1
배수: 1
: 2,500
ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1,820재고 상태
2,835예상 2026-11-02
₩9,562.8
₩8,907.6
₩8,642.4
₩8,439.6
₩8,158.8
최소: 1
배수: 1
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 1재고 상태
2,880주문 중
₩10,795.2
₩10,062
₩9,765.6
₩9,531.6
₩9,297.6
최소: 1
배수: 1
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 202재고 상태
₩13,977.6
₩12,994.8
₩12,604.8
최소: 1
배수: 1
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 30재고 상태
2,500주문 중
컷 테이프
₩12,526.8
₩11,668.8
₩11,310
₩10,795.2
₩10,530
₩10,530
최소: 1
배수: 1
: 2,500
ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8 1재고 상태
100예상 2027-03-23
₩9,032.4
₩8,424
₩8,174.4
₩7,987.2
₩7,784.4
최소: 1
배수: 1