CoolSiC™ 1400V SiC G2 MOSFETs

Infineon Technologies CoolSiC™ 1400V Silicon Carbide (SiC) G2 MOSFETs are offered in a TO-247PLUS-4 reflow package. These Infineon MOSFETs are ideal for high-output power applications such as Electric Vehicle (EV) charging, Battery Energy Storage Systems (BESS), Commercial / Construction / Agricultural Vehicles (CAV), and more. The CoolSiC™ MOSFET G2 1400V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package features reflow capability (3x reflow soldering possible), enabling lower thermal resistance.

Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package 550In Stock
₩56,959.9
₩41,162.7
Min.: 1
Mult.: 1
CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE 90In Stock
240Expected 11/2/2027
₩82,297.3
₩70,192.3
₩57,904
Min.: 1
Mult.: 1
CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE 224In Stock
₩48,096
₩38,499.3
₩33,299.4
₩31,523.8
Min.: 1
Mult.: 1
CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package 307In Stock
₩29,987.8
₩22,392.2
₩19,362.4
₩18,333.7
Min.: 1
Mult.: 1
CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE 230In Stock
₩26,873.4
₩20,475.7
₩17,051.3
₩15,205.3
Min.: 1
Mult.: 1
CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE 399In Stock
₩22,364
₩12,668.7
₩10,836.7
Min.: 1
Mult.: 1
CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET 238In Stock
Cut Tape
₩43,868.4
₩35,117.3
₩30,368.3
Reel
₩30,368.3
₩28,747.7
Min.: 1
Mult.: 1
: 240
Through Hole PG-TO247-4 1 Channel 1.4 kV 147 A 31.3 Ohms - 10 V to 25 V 4.2 V 130 nC - 55 C + 175 C 568 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 349In Stock
₩26,760.7
₩15,444.8
₩13,655.1
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.4 kV 92 A 53.8 mOhms - 10 V, + 23 V 4.2 V 78 nC - 55 C + 175 C 380 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 342In Stock
₩21,405.7
₩16,304.4
₩13,584.7
₩12,090.9
₩11,301.8
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.4 kV 65 A 35 mOhms - 10 V, + 25 V 4.2 V 54 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 116In Stock
240On Order
₩24,520.1
₩18,686
₩15,571.7
₩13,866.5
₩12,950.5
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.4 kV 74 A 67.6 Ohms - 10 V, + 25 V 5.1 V 62 nC - 55 C + 175 C 330 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
1,440Expected 10/21/2027
₩18,686
₩13,922.9
₩11,611.8
₩9,033
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.4 kV 52 A 38 mOhms - 10 V, + 25 V 5.1 V 41 nC - 55 C + 175 C 242 W Enhancement CoolSiC