STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package / Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Qualification Packaging

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss 5,000In Stock
Cut Tape
₩2,636.4
₩1,669.2
₩1,115.4
₩876.7
Reel
₩667.7
Min.: 1
Mult.: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss 361In Stock
₩16,832.4
₩10,155.6
₩8,954.4
₩8,252.4
Min.: 1
Mult.: 1
Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss 624In Stock
₩12,012
₩7,144.8
₩5,990.4
₩5,132.4
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 15 A low loss 3In Stock
₩3,510
₩1,653.6
₩1,315.1
₩1,123.2
Min.: 1
Mult.: 1
Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,175In Stock
₩4,960.8
₩2,620.8
₩2,230.8
₩1,856.4
₩1,606.8
Min.: 1
Mult.: 1
Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package 1,067In Stock
Cut Tape
₩4,118.4
₩2,652
₩1,809.6
₩1,449.2
Reel
₩1,273
₩1,265.2
Min.: 1
Mult.: 1
: 1,000
Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,065In Stock
Cut Tape
₩5,319.6
₩3,478.8
₩2,418
₩1,965.6
Reel
₩1,809.6
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss 2,063In Stock
2,500Expected 2/26/2027
Cut Tape
₩2,823.6
₩1,778.4
₩1,165.3
₩925.1
Reel
₩751.9
Min.: 1
Mult.: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss 1,000In Stock
2,000Expected 12/4/2026
₩3,088.8
₩1,965.6
₩1,324.4
₩1,048.3
Min.: 1
Mult.: 1
Si STGP10M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 14In Stock
1,000Expected 12/25/2026
₩5,475.6
₩3,010.8
₩2,449.2
₩2,043.6
Min.: 1
Mult.: 1
Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 14In Stock
₩11,325.6
₩7,503.6
₩5,491.2
₩4,602
₩4,305.6
Min.: 1
Mult.: 1
- 20 V, 20 V HB2 AEC-Q100 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
586Expected 12/11/2026
₩8,252.4
₩4,617.6
₩3,822
₩3,229.2
₩2,995.2
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
600Expected 1/8/2027
₩9,453.6
₩5,319.6
₩4,414.8
₩3,744
₩3,650.4
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
395Expected 3/12/2027
₩11,559.6
₩6,817.2
₩5,709.6
₩4,898.4
₩4,851.6
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package Non-Stocked Lead-Time 20 Weeks
Reel
₩1,430.5
₩1,390
Min.: 1,000
Mult.: 1,000
: 1,000
Si STGB10M65DF2 Reel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss Non-Stocked Lead-Time 20 Weeks
Cut Tape
₩695.8
₩692.6
₩675.5
₩655.2
Min.: 2,000
Mult.: 1,000
: 1,000
Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss Non-Stocked Lead-Time 20 Weeks
₩2,964
₩1,416.5
₩1,266.7
₩1,000
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube