TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [RDS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.

Results: 20
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 50In Stock
₩6,087.7
₩3,988
₩2,973.4
₩2,494.3
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ 2,000In Stock
Cut Tape
₩10,639.5
₩5,707.3
₩5,228.1
₩5,002.7
₩4,833.6
Reel
₩4,678.5
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=176W F=1MHZ 1,961In Stock
Cut Tape
₩6,707.8
₩3,452.5
₩3,142.5
₩2,705.7
₩2,691.6
Reel
₩2,522.5
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 4 V 36 nC + 150 C 176 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=242W F=1MHZ 53In Stock
₩11,160.9
₩7,468.8
₩6,003.2
₩5,340.9
₩4,734.9
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 63 mOhms 30 V 4 V 56 nC + 150 C 242 W Enhancement Tube
Toshiba MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET 1,960In Stock
Cut Tape
₩8,314.3
₩5,439.5
₩4,002.1
₩3,565.3
₩3,156.6
Reel
₩3,156.6
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=150W F=1MHZ 1,986In Stock
Cut Tape
₩6,101.8
₩3,988
₩2,973.4
₩2,494.3
₩2,311.1
Reel
₩2,170.2
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ 1,974In Stock
Cut Tape
₩5,453.6
₩3,565.3
₩2,592.9
₩2,170.2
₩2,015.2
Reel
₩1,888.3
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 130 W Enhancement Reel, Cut Tape
Toshiba MOSFETs TO220 150V 2.2A N-CH 750In Stock
₩9,300.7
₩5,016.8
₩4,579.9
₩4,439
₩3,833
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 120 A 4.9 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 300 W Enhancement Tube
Toshiba MOSFETs TO220 150V 2.2A N-CH 335In Stock
₩7,919.7
₩4,129
₩4,114.9
₩3,649.8
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 76 A 5 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 53 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH 294In Stock
₩6,256.8
₩3,198.9
₩2,607
₩2,297
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 57 A 7.4 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 46 W Enhancement Tube
Toshiba MOSFETs TO247 650V 1.69A N-CH 85In Stock
60Expected 12/2/2026
₩14,486.6
₩7,835.2
₩7,229.2
₩7,031.9
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 37 A 68 mOhms 30 V 4.5 V 68 nC - 55 C + 150 C 270 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 131In Stock
₩5,453.6
₩3,565.3
₩2,592.9
₩2,170.2
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH 350In Stock
₩6,186.4
₩3,170.7
₩2,860.7
₩2,339.3
₩2,282.9
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 84 A 7.2 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 230 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH 7In Stock
150Expected 2/12/2027
₩5,129.5
₩2,578.8
₩2,325.2
₩1,888.3
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 49 A 9.7 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 45 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 9In Stock
100Expected 1/15/2027
₩9,469.8
₩4,946.3
₩4,608.1
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=176W F=1MHZ 20In Stock
₩8,145.2
₩4,157.1
₩3,790.7
₩3,424.4
₩3,269.3
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 36 nC + 150 C 176 W Enhancement Tube
Toshiba MOSFETs Power MOSFET N-Channel 8In Stock
₩12,161.4
₩6,609.1
₩6,059.6
₩5,650.9
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS 9In Stock
₩13,472
₩9,385.3
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH
150Expected 5/6/2027
₩5,495.9
₩2,776.1
₩2,508.4
₩2,043.3
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 52 A 9.6 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 200 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR DFN 8x8 PD=240W F=1MHZ Non-Stocked Lead-Time 16 Weeks
Reel
₩3,720.3
Min.: 5,000
Mult.: 5,000
: 5,000
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 27.6 A 140 mOhms 30 V 3 V 90 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel