UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

결과: 24
선택 이미지 부품 번호
 제조업체
설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다.
수량 RoHS ECAD 모델 Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
onsemi SiC MOSFET 650V/40MOSICFETG3TO247-4
데이터시트
3,280재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/150MOSICFETG3TO263-7
데이터시트
374재고 상태
MouseReel 사용가능
최소: 1
배수: 1
최대: 20
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247-4
데이터시트
581재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO247-3
데이터시트
1,142재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO24
데이터시트
229재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247-3
데이터시트
644재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO220-3
데이터시트
902재고 상태
최소: 1
배수: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO247-3
데이터시트
1,176재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO247-4
데이터시트
665재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO263-3
데이터시트
1,251재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO263-3
데이터시트
458재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/400MOSICFETG3TO247-3
데이터시트
258재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO263-7
데이터시트
199재고 상태
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO263-7
데이터시트
643재고 상태
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/400MOSICFETG3TO263-7
데이터시트
1,235재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO247-3
데이터시트
109재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO220-3
데이터시트
507재고 상태
최소: 1
배수: 1
최대: 50

Through Hole TO-220-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1700V/400MOSICFETG3TO247-3
데이터시트
610재고 상태
600예상 2026-10-20
최소: 1
배수: 1
최대: 60

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO263-3
데이터시트
192재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 41 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 176 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO247-4
데이터시트
34재고 상태
600예상 2026-08-04
최소: 1
배수: 1
최대: 30

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/150MOSICFETG3TO247-4
데이터시트
64재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1700V/400MOSICFETG3TO263-7
데이터시트
4재고 상태
1,600주문 중
MouseReel 사용가능
최소: 1
배수: 1
최대: 200
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO247-4
데이터시트
600예상 2026-10-19
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO220-3
데이터시트
비재고 리드 타임 34 주
최소: 1
배수: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET