|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16256A-062TBLA2
- ISSI
-
1:
₩30,265.8
-
136재고 상태
|
Mouser 부품 번호
870-LQ16256A062TBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
136재고 상태
|
|
최소: 1
배수: 1
최대: 23
|
|
|
SDRAM - LPDDR4
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 105 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16128A-062TBLA1-TR
- ISSI
-
2,500:
₩14,848.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128A062TBLA1T
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16128A-062TBLA2-TR
- ISSI
-
2,500:
₩16,279
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128A062TBLA2T
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 105 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16128AL-062TBLA1
- ISSI
-
136:
₩15,797.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128AL062TBLA1
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 52 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4X
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16128AL-062TBLA1-TR
- ISSI
-
2,500:
₩15,023.4
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128AL062TBLA1T
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16128AL-062TBLA2
- ISSI
-
136:
₩17,155
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128AL062TBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 52 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4X
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 105 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16128AL-062TBLA2-TR
- ISSI
-
2,500:
₩16,279
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128AL062TBLA2T
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 105 C
|
Reel
|
|
|
|
DRAM 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS43LQ16128AL-062TBLI-TR
- ISSI
-
2,500:
₩13,680.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-16128AL062TBLIT
|
ISSI
|
DRAM 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16256A-062TBLA1-TR
- ISSI
-
2,500:
₩22,119
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256A062TBLA1T
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 38 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16256A-062TBLA2-TR
- ISSI
-
2,500:
₩24,221.4
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256A062TBLA2T
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 38 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 105 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16256AL-062TBLA1
- ISSI
-
136:
₩23,506
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256AL062TBLA1
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 38 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4X
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16256AL-062TBLA1-TR
- ISSI
-
2,500:
₩22,119
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256AL062TBLA1T
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 38 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16256AL-062TBLA2
- ISSI
-
136:
₩25,856.6
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256AL062TBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 38 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4X
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 105 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ16256AL-062TBLA2-TR
- ISSI
-
2,500:
₩24,221.4
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256AL062TBLA2T
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 38 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 105 C
|
Reel
|
|
|
|
DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS43LQ16256AL-062TBLI-TR
- ISSI
-
2,500:
₩20,235.6
-
비재고 리드 타임 38 주
|
Mouser 부품 번호
870-16256AL062TBLIT
|
ISSI
|
DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 38 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
|
16 bit
|
1.6 GHz
|
BGA-200
|
256 M x 16
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ32128A-062TBLA1-TR
- ISSI
-
2,500:
₩22,148.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-32128A062TBLA1T
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ32128A-062TBLA2-TR
- ISSI
-
2,500:
₩24,250.6
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-32128A062TBLA2T
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 105 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ32128AL-062TBLA1
- ISSI
-
136:
₩23,520.6
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-32128AL062TBLA1
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 52 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4X
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ32128AL-062TBLA1-TR
- ISSI
-
2,500:
₩22,148.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-32128AL062TBLA1T
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA(10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ32128AL-062TBLA2
- ISSI
-
136:
₩25,885.8
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-32128AL062TBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA(10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 52 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4X
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
570 mV
|
650 mV
|
- 40 C
|
+ 105 C
|
Tray
|
|
|
|
DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS43LQ32128AL-062TBLI-TR
- ISSI
-
2,500:
₩20,250.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-32128AL062TBLIT
|
ISSI
|
DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
570 mV
|
650 mV
|
- 40 C
|
+ 95 C
|
Reel
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS46LQ32128AL-06T2BLA2-TR
- ISSI
-
2,500:
₩25,637.6
-
재고 없음
|
Mouser 부품 번호
870-32128AL06T2BLA2T
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
재고 없음
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4X
|
4 Gbit
|
32 bit
|
1.6 GHz
|
BGA-200
|
128 M x 32
|
570 mV
|
650 mV
|
- 40 C
|
+ 105 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +95C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16128A-062TBLA1
- ISSI
-
136:
₩15,797.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-LQ16128A062TBLA1
|
ISSI
|
DRAM Automotive (Tc: -40 to +95C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 52 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 95 C
|
Tray
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
- IS46LQ16128A-062TBLA2
- ISSI
-
136:
₩17,155
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-LQ16128A062TBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
비재고 리드 타임 52 주
|
|
최소: 136
배수: 136
|
|
|
SDRAM - LPDDR4
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 105 C
|
Tray
|
|
|
|
DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
- IS43LQ16128A-062TBLI-TR
- ISSI
-
2,500:
₩13,680.2
-
비재고 리드 타임 52 주
|
Mouser 부품 번호
870-LQ16128A062TBLIT
|
ISSI
|
DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
|
|
비재고 리드 타임 52 주
|
|
최소: 2,500
배수: 2,500
|
|
|
SDRAM - LPDDR4
|
2 Gbit
|
16 bit
|
1.6 GHz
|
BGA-200
|
128 M x 16
|
1.06 V
|
1.17 V
|
- 40 C
|
+ 95 C
|
Reel
|
|
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