|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4013DEHRC11
- ROHM Semiconductor
-
1:
₩38,364.8
-
420재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4013DEHRC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
420재고 상태
|
|
|
₩38,364.8
|
|
|
₩24,472
|
|
|
₩24,396
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Transistor SiC MOSFET 750V 13m 4th Gen TO-247-4L
- SCT4013DRHRC15
- ROHM Semiconductor
-
1:
₩38,364.8
-
375재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4013DRHRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Transistor SiC MOSFET 750V 13m 4th Gen TO-247-4L
|
|
375재고 상태
|
|
|
₩38,364.8
|
|
|
₩24,472
|
|
|
₩24,396
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4036DEC11
- ROHM Semiconductor
-
1:
₩21,751.2
-
439재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4036DEC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
439재고 상태
|
|
|
₩21,751.2
|
|
|
₩13,208.8
|
|
|
₩11,764.8
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4036DEHRC11
- ROHM Semiconductor
-
1:
₩22,268
-
450재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4036DEHRC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
450재고 상태
|
|
|
₩22,268
|
|
|
₩13,543.2
|
|
|
₩12,129.6
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4036DRC15
- ROHM Semiconductor
-
1:
₩19,152
-
410재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4036DRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
410재고 상태
|
|
|
₩19,152
|
|
|
₩11,491.2
|
|
|
₩9,971.2
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4036DRHRC15
- ROHM Semiconductor
-
1:
₩19,608
-
450재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4036DRHRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
450재고 상태
|
|
|
₩19,608
|
|
|
₩11,795.2
|
|
|
₩10,275.2
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4036DWAHRTL
- ROHM Semiconductor
-
1:
₩19,015.2
-
900재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4036DWAHRTL
신제품
|
ROHM Semiconductor
|
SiC MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
900재고 상태
|
|
|
₩19,015.2
|
|
|
₩13,224
|
|
|
₩10,518.4
|
|
|
₩9,880
|
|
최소: 1
배수: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
SiC MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4036DWATL
- ROHM Semiconductor
-
1:
₩18,589.6
-
800재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4036DWATL
신제품
|
ROHM Semiconductor
|
SiC MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
800재고 상태
|
|
|
₩18,589.6
|
|
|
₩12,889.6
|
|
|
₩10,199.2
|
|
|
₩9,576
|
|
최소: 1
배수: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
SiC MOSFET 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4050KEC11
- ROHM Semiconductor
-
1:
₩22,556.8
-
450재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4050KEC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
450재고 상태
|
|
|
₩22,556.8
|
|
|
₩13,740.8
|
|
|
₩12,327.2
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4050KEHRC11
- ROHM Semiconductor
-
1:
₩23,088.8
-
442재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4050KEHRC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
442재고 상태
|
|
|
₩23,088.8
|
|
|
₩14,090.4
|
|
|
₩12,707.2
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4050KRHRC15
- ROHM Semiconductor
-
1:
₩19,972.8
-
427재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4050KRHRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
427재고 상태
|
|
|
₩19,972.8
|
|
|
₩12,038.4
|
|
|
₩10,533.6
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4065DEC11
- ROHM Semiconductor
-
1:
₩16,628.8
-
450재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4065DEC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
450재고 상태
|
|
|
₩16,628.8
|
|
|
₩11,552
|
|
|
₩9,636.8
|
|
|
₩8,010.4
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4065DEHRC11
- ROHM Semiconductor
-
1:
₩17,008.8
-
450재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4065DEHRC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
450재고 상태
|
|
|
₩17,008.8
|
|
|
₩11,871.2
|
|
|
₩9,925.6
|
|
|
₩8,268.8
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4065DRC15
- ROHM Semiconductor
-
1:
₩13,558.4
-
440재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4065DRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
440재고 상태
|
|
|
₩13,558.4
|
|
|
₩7,949.6
|
|
|
₩6,916
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4065DRHRC15
- ROHM Semiconductor
-
1:
₩14,850.4
-
447재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4065DRHRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
447재고 상태
|
|
|
₩14,850.4
|
|
|
₩8,724.8
|
|
|
₩7,372
|
|
|
₩7,128.8
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
- SCT4065DWAHRTL
- ROHM Semiconductor
-
1:
₩14,227.2
-
700재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4065DWAHRTL
신제품
|
ROHM Semiconductor
|
SiC MOSFET 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
|
|
700재고 상태
|
|
|
₩14,227.2
|
|
|
₩9,728
|
|
|
₩7,174.4
|
|
|
₩6,733.6
|
|
최소: 1
배수: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
SiC MOSFET 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
- SCT4065DWATL
- ROHM Semiconductor
-
1:
₩13,892.8
-
700재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4065DWATL
신제품
|
ROHM Semiconductor
|
SiC MOSFET 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
|
|
700재고 상태
|
|
|
₩13,892.8
|
|
|
₩9,484.8
|
|
|
₩6,992
|
|
|
₩6,961.6
|
|
|
₩6,536
|
|
최소: 1
배수: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4090KEC11
- ROHM Semiconductor
-
1:
₩16,811.2
-
440재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4090KEC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
440재고 상태
|
|
|
₩16,811.2
|
|
|
₩9,971.2
|
|
|
₩8,481.6
|
|
|
₩8,390.4
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4090KEHRC11
- ROHM Semiconductor
-
1:
₩17,206.4
-
443재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4090KEHRC11
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
443재고 상태
|
|
|
₩17,206.4
|
|
|
₩10,229.6
|
|
|
₩8,709.6
|
|
|
₩8,664
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247N-3
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4090KRC15
- ROHM Semiconductor
-
1:
₩14,744
-
450재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4090KRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
450재고 상태
|
|
|
₩14,744
|
|
|
₩8,664
|
|
|
₩7,326.4
|
|
|
₩7,068
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4090KRHRC15
- ROHM Semiconductor
-
1:
₩15,093.6
-
400재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4090KRHRC15
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
400재고 상태
|
|
|
₩15,093.6
|
|
|
₩8,876.8
|
|
|
₩7,508.8
|
|
|
₩7,296
|
|
최소: 1
배수: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
- SCT4090KWAHRTL
- ROHM Semiconductor
-
1:
₩14,470.4
-
887재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4090KWAHRTL
신제품
|
ROHM Semiconductor
|
SiC MOSFET Discrete Semiconductors, SiC Power Devices, 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
|
|
887재고 상태
|
|
|
₩14,470.4
|
|
|
₩9,895.2
|
|
|
₩7,341.6
|
|
|
₩6,885.6
|
|
최소: 1
배수: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
SiC MOSFET 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
- SCT4090KWATL
- ROHM Semiconductor
-
1:
₩14,136
-
800재고 상태
-
신제품
|
Mouser 부품 번호
755-SCT4090KWATL
신제품
|
ROHM Semiconductor
|
SiC MOSFET 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
|
|
800재고 상태
|
|
|
₩14,136
|
|
|
₩9,667.2
|
|
|
₩7,128.8
|
|
|
₩6,688
|
|
최소: 1
배수: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
SiC MOSFET TO268 1.7KV 5.9A N CH SIC
- SCT2750NWCTL1
- ROHM Semiconductor
-
1:
₩11,324
-
44재고 상태
-
1,600주문 중
-
신제품
|
Mouser 부품 번호
755-SCT2750NWCTL1
신제품
|
ROHM Semiconductor
|
SiC MOSFET TO268 1.7KV 5.9A N CH SIC
|
|
44재고 상태
1,600주문 중
주문 중:
800 예상 2026-11-23
800 예상 2026-11-30
|
|
|
₩11,324
|
|
|
₩7,417.6
|
|
|
₩4,940
|
|
|
₩4,316.8
|
|
|
₩4,316.8
|
|
최소: 1
배수: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263CA-7L
|
|
|
|
MOSFET 모듈 3-PHASE AUTOMOTIVE POWER MOSFET MODULE APM21
- NXV10V125DT1
- onsemi
-
1:
₩44,961.6
-
88재고 상태
-
신제품
|
Mouser 부품 번호
863-NXV10V125DT1
신제품
|
onsemi
|
MOSFET 모듈 3-PHASE AUTOMOTIVE POWER MOSFET MODULE APM21
|
|
88재고 상태
|
|
최소: 1
배수: 1
최대: 44
|
|
MOSFET Modules
|
|
Press Fit
|
APM21-CGA
|
|