MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

결과: 20
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장
STMicroelectronics MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package 934재고 상태
1,000예상 2027-01-29
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 88 mOhms 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET in D2PAK package 1,825재고 상태
최소: 1
배수: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 135 mOhms 25 V 2 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET in D2PAK package 1,852재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 150 mOhms 25 V 3 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V MDMesh 1,314재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 295 mOhms 30 V 5 V 70 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 1,567재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21.5 A 135 mOhms 25 V 3 V 47 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV 2,784재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 7 A 415 mOhms 25 V 3.25 V 13 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET in D2PAK package 987재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 125 mOhms 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package 4,010재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.4 Ohms 25 V 3 V 8.5 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 4,880재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 4.8 A 860 mOhms 25 V 3 V 10 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V MDMesh 639재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 295 mOhms 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 800 V MDMesh 386재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 295 mOhms 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A 524재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms 30 V 4 V 18 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V 0.25 17A Mdmesh 1재고 상태
2,000예상 2027-06-18
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms 30 V 3 V 70 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package 77재고 상태
최소: 1
배수: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 95 mOhms 25 V 4 V 71 nC - 55 C + 150 C 57 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 1,140재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 5.5 A 660 mOhms 25 V 3.25 V 8.8 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V 0.27 ohm 13A MDmesh
2,000예상 2027-05-28
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected 400재고 상태
최소: 1
배수: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 950 mOhms 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5 비재고 리드 타임 24 주
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-CH 800V IPAK DPAK Mdmesh PWR MOSFET 비재고 리드 타임 24 주
최소: 1,000
배수: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms 30 V 4 V 18 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET in I2PAK package 비재고 리드 타임 24 주
최소: 1,000
배수: 1,000
Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 26 A 125 mOhms 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube