|
|
MOSFET N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6XKSA1
- Infineon Technologies
-
1:
₩3,591.6
-
836재고 상태
|
Mouser 부품 번호
726-IPA60R280P6XKSA1
|
Infineon Technologies
|
MOSFET N-Ch 600V 7.7A TO220FP-3
|
|
836재고 상태
|
|
|
₩3,591.6
|
|
|
₩1,766.6
|
|
|
₩1,591.4
|
|
|
₩1,271.7
|
|
|
보기
|
|
|
₩1,086.2
|
|
|
₩1,062.9
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPP60R125P6XKSA1
- Infineon Technologies
-
1:
₩6,759.8
-
276재고 상태
|
Mouser 부품 번호
726-IPP60R125P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
276재고 상태
|
|
|
₩6,759.8
|
|
|
₩3,489.4
|
|
|
₩3,168.2
|
|
|
₩2,525.8
|
|
|
₩2,423.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R070P6
- Infineon Technologies
-
1:
₩9,008.2
-
207재고 상태
|
Mouser 부품 번호
726-IPW60R070P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
207재고 상태
|
|
|
₩9,008.2
|
|
|
₩6,891.2
|
|
|
₩5,577.2
|
|
|
₩4,949.4
|
|
|
₩4,234
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
53.5 A
|
63 mOhms
|
- 20 V, 20 V
|
3.5 V
|
100 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R070P6XKSA1
- Infineon Technologies
-
1:
₩8,993.6
-
283재고 상태
|
Mouser 부품 번호
726-IPW60R070P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
283재고 상태
|
|
|
₩8,993.6
|
|
|
₩6,876.6
|
|
|
₩5,562.6
|
|
|
₩4,949.4
|
|
|
₩4,234
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
53.5 A
|
63 mOhms
|
- 20 V, 20 V
|
3.5 V
|
100 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R099P6
- Infineon Technologies
-
1:
₩7,402.2
-
242재고 상태
|
Mouser 부품 번호
726-IPW60R099P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
242재고 상태
|
|
|
₩7,402.2
|
|
|
₩5,416.6
|
|
|
₩4,394.6
|
|
|
₩3,883.6
|
|
|
₩3,328.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
99 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPP60R125P6
- Infineon Technologies
-
1:
₩5,664.8
-
499예상 2026-05-06
|
Mouser 부품 번호
726-IPP60R125P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
499예상 2026-05-06
|
|
|
₩5,664.8
|
|
|
₩4,365.4
|
|
|
₩3,533.2
|
|
|
₩3,022.2
|
|
|
보기
|
|
|
₩2,686.4
|
|
|
₩2,525.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 600V 6.5A TO220FP-3
- IPA60R380P6
- Infineon Technologies
-
1:
₩3,168.2
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
726-IPA60R380P6
|
Infineon Technologies
|
MOSFET N-Ch 600V 6.5A TO220FP-3
|
|
비재고 리드 타임 12 주
|
|
|
₩3,168.2
|
|
|
₩2,029.4
|
|
|
₩1,406
|
|
|
₩1,191.4
|
|
|
보기
|
|
|
₩995.7
|
|
|
₩918.3
|
|
|
₩870.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
10.6 A
|
342 mOhms
|
- 20 V, 20 V
|
3.5 V
|
19 nC
|
- 55 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_LEGACY
- IPP60R160P6XKSA1
- Infineon Technologies
-
1:
₩4,920.2
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
726-IPP60R160P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_LEGACY
|
|
비재고 리드 타임 12 주
|
|
|
₩4,920.2
|
|
|
₩2,452.8
|
|
|
₩2,233.8
|
|
|
₩1,810.4
|
|
|
보기
|
|
|
₩1,635.2
|
|
|
₩1,606
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R125P6
- Infineon Technologies
-
1:
₩6,234.2
-
리드 타임 8 주
|
Mouser 부품 번호
726-IPW60R125P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
리드 타임 8 주
|
|
|
₩6,234.2
|
|
|
₩4,861.8
|
|
|
₩3,942
|
|
|
₩3,504
|
|
|
보기
|
|
|
₩2,993
|
|
|
₩2,817.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_PRICE/PERFORM
- IPZ60R099P6FKSA1
- Infineon Technologies
-
1:
₩9,475.4
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
726-IPZ60R099P6FKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_PRICE/PERFORM
|
|
비재고 리드 타임 12 주
|
|
|
₩9,475.4
|
|
|
₩5,431.2
|
|
|
₩4,540.6
|
|
|
₩3,942
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
99 mOhms
|
- 20 V, 20 V
|
3 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPA60R125P6
- Infineon Technologies
-
1:
₩6,336.4
-
비재고 리드 타임 26 주
|
Mouser 부품 번호
726-IPA60R125P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
비재고 리드 타임 26 주
|
|
|
₩6,336.4
|
|
|
₩4,161
|
|
|
₩3,182.8
|
|
|
₩2,686.4
|
|
|
보기
|
|
|
₩2,365.2
|
|
|
₩2,277.6
|
|
|
₩2,219.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPL60R180P6
- Infineon Technologies
-
3,000:
₩1,927.2
-
비재고 리드 타임 39 주
|
Mouser 부품 번호
726-IPL60R180P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
비재고 리드 타임 39 주
|
|
최소: 3,000
배수: 3,000
|
|
|
Si
|
SMD/SMT
|
ThinPAK-5
|
N-Channel
|
1 Channel
|
600 V
|
22.4 A
|
162 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 40 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel
|
|
|
|
MOSFET LOW POWER PRICE/PERFORM
- IPL60R210P6AUMA1
- Infineon Technologies
-
3,000:
₩1,649.8
-
비재고 리드 타임 39 주
|
Mouser 부품 번호
726-IPL60R210P6AUMA1
|
Infineon Technologies
|
MOSFET LOW POWER PRICE/PERFORM
|
|
비재고 리드 타임 39 주
|
|
최소: 3,000
배수: 3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19.2 A
|
189 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 40 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Reel
|
|