TK55S10N1,LQ
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757-TK55S10N1LQ
TK55S10N1,LQ
제조업체:
설명:
MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK
MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK
데이터시트:
재고 상태: 1,560
-
재고:
-
1,560 즉시 배송 가능예기치 않은 오류가 발생했습니다. 나중에 다시 시도하십시오.
-
공장 리드 타임:
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20 주 표시된 것보다 많은 수량에 대한 추정 공장 생산 시간입니다.
가격 (KRW)
데이터시트
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
Test/Quality Data
- KRHTS:
- 8541299000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 854129000
- TARIC:
- 8541290000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2