|
|
MOSFET HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
₩10,822.4
-
1,700재고 상태
|
Mouser 부품 번호
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,700재고 상태
|
|
|
₩10,822.4
|
|
|
₩7,235.2
|
|
|
₩5,821.6
|
|
|
₩5,183.2
|
|
|
₩4,164.8
|
|
|
₩4,149.6
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
₩8,907.2
-
665재고 상태
|
Mouser 부품 번호
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
665재고 상태
|
|
|
₩8,907.2
|
|
|
₩5,836.8
|
|
|
₩4,347.2
|
|
|
₩3,648
|
|
|
₩3,374.4
|
|
|
₩3,161.6
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
₩12,600.8
-
1,199재고 상태
|
Mouser 부품 번호
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,199재고 상태
|
|
|
₩12,600.8
|
|
|
₩8,481.6
|
|
|
₩5,912.8
|
|
|
₩5,152.8
|
|
|
₩4,590.4
|
|
|
₩4,575.2
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
₩9,788.8
-
1,098재고 상태
|
Mouser 부품 번호
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1,098재고 상태
|
|
|
₩9,788.8
|
|
|
₩6,475.2
|
|
|
₩4,712
|
|
|
₩4,134.4
|
|
|
₩3,739.2
|
|
|
₩3,572
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
₩16,750.4
-
25재고 상태
|
Mouser 부품 번호
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
25재고 상태
|
|
|
₩16,750.4
|
|
|
₩11,840.8
|
|
|
₩9,864.8
|
|
|
₩8,785.6
|
|
|
₩8,223.2
|
|
|
₩8,223.2
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
₩16,385.6
-
28재고 상태
-
2,000예상 2027-03-04
|
Mouser 부품 번호
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
28재고 상태
2,000예상 2027-03-04
|
|
|
₩16,385.6
|
|
|
₩11,582.4
|
|
|
₩9,652
|
|
|
₩8,603.2
|
|
|
₩8,132
|
|
|
₩8,132
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
₩7,797.6
-
148재고 상태
-
수명 종료
|
Mouser 부품 번호
726-IPDD60R150G7XTM1
수명 종료
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
148재고 상태
|
|
|
₩7,797.6
|
|
|
₩5,107.2
|
|
|
₩3,800
|
|
|
₩3,192
|
|
|
₩2,948.8
|
|
|
₩2,766.4
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
₩28,530.4
-
1,950예상 2026-07-15
|
Mouser 부품 번호
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1,950예상 2026-07-15
|
|
|
₩28,530.4
|
|
|
₩21,310.4
|
|
|
₩18,422.4
|
|
|
₩17,449.6
|
|
|
₩16,522.4
|
|
|
₩16,522.4
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
₩5,730.4
-
비재고 리드 타임 39 주
|
Mouser 부품 번호
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 39 주
|
|
|
₩5,730.4
|
|
|
₩3,739.2
|
|
|
₩2,720.8
|
|
|
₩2,280
|
|
|
₩2,112.8
|
|
|
₩2,112.8
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
2,000:
₩3,009.6
-
비재고 리드 타임 15 주
-
NRND
|
Mouser 부품 번호
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
비재고 리드 타임 15 주
|
|
최소: 2,000
배수: 2,000
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel
|
|