|
|
MOSFET HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
₩10,822.4
-
1,700재고 상태
|
Mouser 부품 번호
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,700재고 상태
|
|
|
₩10,822.4
|
|
|
₩7,235.2
|
|
|
₩5,821.6
|
|
|
₩5,183.2
|
|
|
₩4,164.8
|
|
|
₩4,149.6
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
₩8,132
-
665재고 상태
|
Mouser 부품 번호
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
665재고 상태
|
|
|
₩8,132
|
|
|
₩5,107.2
|
|
|
₩3,860.8
|
|
|
₩3,328.8
|
|
|
₩2,872.8
|
|
|
보기
|
|
|
₩3,085.6
|
|
|
₩2,614.4
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
₩12,600.8
-
1,199재고 상태
|
Mouser 부품 번호
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,199재고 상태
|
|
|
₩12,600.8
|
|
|
₩8,481.6
|
|
|
₩5,912.8
|
|
|
₩5,152.8
|
|
|
₩4,590.4
|
|
|
₩4,575.2
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
₩9,788.8
-
1,098재고 상태
|
Mouser 부품 번호
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1,098재고 상태
|
|
|
₩9,788.8
|
|
|
₩6,475.2
|
|
|
₩4,712
|
|
|
₩4,134.4
|
|
|
₩3,739.2
|
|
|
₩3,572
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
₩19,395.2
-
25재고 상태
|
Mouser 부품 번호
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
25재고 상태
|
|
|
₩19,395.2
|
|
|
₩13,376
|
|
|
₩9,971.2
|
|
|
₩8,861.6
|
|
|
₩7,752
|
|
|
₩7,752
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
₩19,060.8
-
30재고 상태
-
2,000주문 중
|
Mouser 부품 번호
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
30재고 상태
2,000주문 중
|
|
|
₩19,060.8
|
|
|
₩13,132.8
|
|
|
₩8,816
|
|
|
₩7,843.2
|
|
|
₩7,508.8
|
|
|
₩7,493.6
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
₩7,128.8
-
148재고 상태
-
수명 종료
|
Mouser 부품 번호
726-IPDD60R150G7XTM1
수명 종료
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
148재고 상태
|
|
|
₩7,128.8
|
|
|
₩4,666.4
|
|
|
₩3,480.8
|
|
|
₩2,918.4
|
|
|
₩2,508
|
|
|
보기
|
|
|
₩2,705.6
|
|
|
₩2,280
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
₩29,108
-
1,950예상 2026-07-15
|
Mouser 부품 번호
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1,950예상 2026-07-15
|
|
|
₩29,108
|
|
|
₩21,918.4
|
|
|
₩17,890.4
|
|
|
₩17,084.8
|
|
|
₩15,686.4
|
|
|
₩14,318.4
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
₩5,578.4
-
비재고 리드 타임 39 주
|
Mouser 부품 번호
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 39 주
|
|
|
₩5,578.4
|
|
|
₩3,541.6
|
|
|
₩2,492.8
|
|
|
₩2,082.4
|
|
|
₩2,052
|
|
|
₩2,052
|
|
최소: 1
배수: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
1:
₩7,828
-
비재고 리드 타임 15 주
-
NRND
|
Mouser 부품 번호
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
비재고 리드 타임 15 주
|
|
|
₩7,828
|
|
|
₩5,061.6
|
|
|
₩3,784.8
|
|
|
₩3,161.6
|
|
|
₩2,781.6
|
|
|
보기
|
|
|
₩2,948.8
|
|
|
₩2,629.6
|
|
최소: 1
배수: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|