|
|
MOSFET HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
₩4,628.2
-
1,483재고 상태
|
Mouser 부품 번호
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,483재고 상태
|
|
|
₩4,628.2
|
|
|
₩3,007.6
|
|
|
₩2,087.8
|
|
|
₩1,810.4
|
|
|
₩1,635.2
|
|
|
₩1,439.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
₩13,154.6
-
2,682재고 상태
|
Mouser 부품 번호
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,682재고 상태
|
|
|
₩13,154.6
|
|
|
₩8,993.6
|
|
|
₩7,183.2
|
|
|
₩7,168.6
|
|
|
₩6,380.2
|
|
|
₩5,854.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
₩7,402.2
-
1,783재고 상태
|
Mouser 부품 번호
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1,783재고 상태
|
|
|
₩7,402.2
|
|
|
₩4,920.2
|
|
|
₩3,533.2
|
|
|
₩3,358
|
|
|
보기
|
|
|
₩2,730.2
|
|
|
₩3,022.2
|
|
|
₩2,730.2
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
₩9,154.2
-
1,354재고 상태
|
Mouser 부품 번호
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,354재고 상태
|
|
|
₩9,154.2
|
|
|
₩6,511.6
|
|
|
₩4,774.2
|
|
|
₩4,307
|
|
|
₩3,898.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
₩8,249
-
2,005재고 상태
|
Mouser 부품 번호
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,005재고 상태
|
|
|
₩8,249
|
|
|
₩6,219.6
|
|
|
₩4,496.8
|
|
|
₩4,482.2
|
|
|
보기
|
|
|
₩3,664.6
|
|
|
₩4,073.4
|
|
|
₩3,664.6
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
₩20,527.6
-
2,122재고 상태
|
Mouser 부품 번호
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
2,122재고 상태
|
|
|
₩20,527.6
|
|
|
₩14,410.2
|
|
|
₩12,833.4
|
|
|
₩11,855.2
|
|
|
₩10,468.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
₩5,694
-
1,136재고 상태
|
Mouser 부품 번호
726-IPDD60R150G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,136재고 상태
|
|
|
₩5,694
|
|
|
₩3,752.2
|
|
|
₩2,744.8
|
|
|
₩2,467.4
|
|
|
₩2,233.8
|
|
|
₩2,000.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
₩3,109.8
-
665재고 상태
|
Mouser 부품 번호
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
665재고 상태
|
|
|
₩3,109.8
|
|
|
₩2,905.4
|
|
|
₩2,861.6
|
|
|
₩2,847
|
|
|
₩2,350.6
|
|
|
₩2,336
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
₩13,344.4
-
21재고 상태
|
Mouser 부품 번호
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
21재고 상태
|
|
|
₩13,344.4
|
|
|
₩9,533.8
|
|
|
₩7,796.4
|
|
|
₩7,300
|
|
|
₩6,365.6
|
|
|
₩6,365.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
1:
₩6,292.6
-
비재고 리드 타임 12 주
-
NRND
|
Mouser 부품 번호
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
비재고 리드 타임 12 주
|
|
|
₩6,292.6
|
|
|
₩4,161
|
|
|
₩2,934.6
|
|
|
₩2,686.4
|
|
|
₩2,496.6
|
|
|
₩2,175.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R102G7XTMA1
- Infineon Technologies
-
1,700:
₩3,168.2
-
비재고 리드 타임 19 주
|
Mouser 부품 번호
726-IPDD60R102G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
비재고 리드 타임 19 주
|
|
최소: 1,700
배수: 1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
102 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
Reel
|
|