|
|
GaN FET Two 140 mohm / 650 V GaN transistors in half-bridge configuration
- IGI65D1414A3MSXUMA1
- Infineon Technologies
-
1:
₩10,776.8
-
2,678재고 상태
-
신제품
|
Mouser 부품 번호
726-IGI65D1414A3MSXU
신제품
|
Infineon Technologies
|
GaN FET Two 140 mohm / 650 V GaN transistors in half-bridge configuration
|
|
2,678재고 상태
|
|
|
₩10,776.8
|
|
|
₩7,280.8
|
|
|
₩5,426.4
|
|
|
₩5,152.8
|
|
|
₩4,423.2
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
QFN-32
|
N-Channel
|
2 Channel
|
650 V
|
|
170 mOhms
|
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
|
|
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGL65R055D2XUMA1
- Infineon Technologies
-
1:
₩10,153.6
-
1,948재고 상태
-
신제품
|
Mouser 부품 번호
726-IGL65R055D2XUMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
1,948재고 상태
|
|
|
₩10,153.6
|
|
|
₩7,326.4
|
|
|
₩5,380.8
|
|
|
₩4,940
|
|
|
₩4,012.8
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
22 A
|
70 mOhms
|
- 10 V
|
1.6 V
|
4.7 nC
|
- 55 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGL65R080D2XUMA1
- Infineon Technologies
-
1:
₩8,968
-
2,529재고 상태
-
신제품
|
Mouser 부품 번호
726-IGL65R080D2XUMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,529재고 상태
|
|
|
₩8,968
|
|
|
₩5,988.8
|
|
|
₩4,301.6
|
|
|
₩3,891.2
|
|
|
₩3,754.4
|
|
|
₩3,161.6
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
18 A
|
100 mOhms
|
- 10 V
|
1.6 V
|
25 nC
|
- 55 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGL65R110D2XUMA1
- Infineon Technologies
-
1:
₩7,068
-
2,577재고 상태
-
신제품
|
Mouser 부품 번호
726-IGL65R110D2XUMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,577재고 상태
|
|
|
₩7,068
|
|
|
₩4,666.4
|
|
|
₩3,298.4
|
|
|
₩2,827.2
|
|
|
₩2,295.2
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
16 A
|
140 mOhms
|
- 10 V
|
1.6 V
|
2.4 nC
|
- 55 C
|
+ 150 C
|
59 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGL65R140D2XUMA1
- Infineon Technologies
-
1:
₩6,064.8
-
2,407재고 상태
-
신제품
|
Mouser 부품 번호
726-IGL65R140D2XUMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,407재고 상태
|
|
|
₩6,064.8
|
|
|
₩3,982.4
|
|
|
₩2,781.6
|
|
|
₩2,295.2
|
|
|
₩1,900
|
|
|
₩1,869.6
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
13 A
|
170 mOhms
|
- 10 V
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGLD65R055D2AUMA1
- Infineon Technologies
-
1:
₩11,020
-
2,307재고 상태
-
신제품
|
Mouser 부품 번호
726-IGLD65R055D2AUMA
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,307재고 상태
|
|
|
₩11,020
|
|
|
₩7,189.6
|
|
|
₩5,411.2
|
|
|
₩5,137.6
|
|
|
₩4,712
|
|
|
₩4,180
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
20 A
|
70 mOhms
|
- 10 V
|
1.2 V
|
4.7 nC
|
- 55 C
|
+ 150 C
|
91 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGLD65R080D2AUMA1
- Infineon Technologies
-
1:
₩9,241.6
-
2,692재고 상태
-
신제품
|
Mouser 부품 번호
726-IGLD65R080D2AUMA
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,692재고 상태
|
|
|
₩9,241.6
|
|
|
₩5,943.2
|
|
|
₩4,438.4
|
|
|
₩4,043.2
|
|
|
₩3,906.4
|
|
|
₩3,298.4
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
18 A
|
100 mOhms
|
- 10 V
|
1.2 V
|
3.3 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGLD65R110D2AUMA1
- Infineon Technologies
-
1:
₩7,280.8
-
2,664재고 상태
-
신제품
|
Mouser 부품 번호
726-IGLD65R110D2AUMA
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,664재고 상태
|
|
|
₩7,280.8
|
|
|
₩4,651.2
|
|
|
₩3,404.8
|
|
|
₩2,948.8
|
|
|
₩2,933.6
|
|
|
₩2,386.4
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
20 A
|
140 mOhms
|
- 10 V
|
1.2 V
|
2.4 nC
|
- 55 C
|
+ 150 C
|
51 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGLD65R140D2AUMA1
- Infineon Technologies
-
1:
₩6,429.6
-
2,717재고 상태
-
신제품
|
Mouser 부품 번호
726-IGLD65R140D2AUMA
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
2,717재고 상태
|
|
|
₩6,429.6
|
|
|
₩4,073.6
|
|
|
₩2,964
|
|
|
₩2,416.8
|
|
|
₩2,021.6
|
|
|
보기
|
|
|
₩2,386.4
|
|
|
₩1,945.6
|
|
최소: 1
배수: 1
:
3,000
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
12 A
|
170 mOhms
|
- 10 V
|
1.2 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGT65R025D2ATMA1
- Infineon Technologies
-
1:
₩19,881.6
-
267재고 상태
-
6,000주문 중
-
신제품
|
Mouser 부품 번호
726-IGT65R025D2ATMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
267재고 상태
6,000주문 중
주문 중:
4,000 예상 2026-06-11
2,000 예상 2026-07-09
|
|
|
₩19,881.6
|
|
|
₩13,634.4
|
|
|
₩11,719.2
|
|
|
₩10,792
|
|
|
₩9,864.8
|
|
|
₩8,800.8
|
|
최소: 1
배수: 1
:
2,000
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
70 A
|
30 mOhms
|
- 10 V
|
1.6 V
|
11 nC
|
- 55 C
|
+ 150 C
|
236 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGT65R035D2ATMA1
- Infineon Technologies
-
1:
₩16,324.8
-
642재고 상태
-
8,000예상 2026-09-17
-
신제품
|
Mouser 부품 번호
726-IGT65R035D2ATMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
642재고 상태
8,000예상 2026-09-17
|
|
|
₩16,324.8
|
|
|
₩11,536.8
|
|
|
₩9,621.6
|
|
|
₩8,740
|
|
|
₩7,463.2
|
|
|
₩6,992
|
|
최소: 1
배수: 1
:
2,000
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
49 A
|
42 mOhms
|
- 10 V
|
1.6 V
|
7.7 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGT65R045D2ATMA1
- Infineon Technologies
-
1:
₩11,992.8
-
1,746재고 상태
-
신제품
|
Mouser 부품 번호
726-IGT65R045D2ATMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
1,746재고 상태
|
|
|
₩11,992.8
|
|
|
₩8,025.6
|
|
|
₩6,490.4
|
|
|
₩6,080
|
|
|
₩6,004
|
|
|
₩5,213.6
|
|
최소: 1
배수: 1
:
2,000
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
38 A
|
54 mOhms
|
- 10 V
|
1.6 V
|
6 nC
|
- 55 C
|
+ 150 C
|
131 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGT65R140D2ATMA1
- Infineon Technologies
-
1:
₩5,760.8
-
1,544재고 상태
-
신제품
|
Mouser 부품 번호
726-IGT65R140D2ATMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
1,544재고 상태
|
|
|
₩5,760.8
|
|
|
₩3,617.6
|
|
|
₩2,690.4
|
|
|
₩2,310.4
|
|
|
₩1,991.2
|
|
|
₩1,900
|
|
최소: 1
배수: 1
:
2,000
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
13 A
|
170 mOhms
|
- 10 V
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 650 V G5
- IGT65R055D2ATMA1
- Infineon Technologies
-
1:
₩10,168.8
-
355재고 상태
-
2,000예상 2026-07-23
-
신제품
|
Mouser 부품 번호
726-IGT65R055D2ATMA1
신제품
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 650 V G5
|
|
355재고 상태
2,000예상 2026-07-23
|
|
|
₩10,168.8
|
|
|
₩6,779.2
|
|
|
₩5,320
|
|
|
₩4,970.4
|
|
|
₩4,605.6
|
|
|
₩4,104
|
|
최소: 1
배수: 1
:
2,000
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
31 A
|
66 mOhms
|
- 10 V
|
1.6 V
|
4.7 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
CoolGaN
|
|