Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

모든 결과 (1,401)

선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS
ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 200V 5A SM SKY BARRI 4,880재고 상태
최소: 1
배수: 1
: 2,500

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive) 1,963재고 상태
최소: 1
배수: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive) 1,819재고 상태
최소: 1
배수: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive) 1,976재고 상태
최소: 1
배수: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Pch, -100V(Vdss), -120A(Id), (4.5V, 6.0V Drive) 514재고 상태
최소: 1
배수: 1

ROHM Semiconductor MOSFET -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET 1,484재고 상태
최소: 1
배수: 1
: 2,500

ROHM Semiconductor MOSFET SOP8 100V 4.5A N-CH MOSFET 3,071재고 상태
최소: 1
배수: 1
: 2,500

ROHM Semiconductor MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET 4,733재고 상태
최소: 1
배수: 1
: 2,500

ROHM Semiconductor MOSFET 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET 1,718재고 상태
최소: 1
배수: 1
: 2,500

ROHM Semiconductor MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET 14,702재고 상태
최소: 1
배수: 1
: 3,000

ROHM Semiconductor MOSFET DFN 100V 2A DUAL CH 17,338재고 상태
최소: 1
배수: 1
: 3,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 7,518재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp 7,594재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 100V 12A SM SKY BARRI 3,980재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 100V 12A SM SKY BARRI 3,668재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 100V 15A SM SKY BARRI 5,672재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 100V 15A SM SKY BARRI 4,095재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 4,820재고 상태
최소: 1
배수: 1
: 2,500

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1,900재고 상태
최소: 1
배수: 1
: 1,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1,970재고 상태
최소: 1
배수: 1
: 1,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2,000재고 상태
최소: 1
배수: 1
: 1,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1,988재고 상태
최소: 1
배수: 1
: 1,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1,908재고 상태
최소: 1
배수: 1
: 1,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 100V 3A SM SKY BARRI 3,852재고 상태
최소: 1
배수: 1
: 4,000

ROHM Semiconductor 쇼트키 다이오드 및 정류기 RECT 100V 5A SM SKY BARRI 3,900재고 상태
최소: 1
배수: 1
: 4,000