|
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
₩2,796.8
-
7,033재고 상태
|
Mouser 부품 번호
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
7,033재고 상태
|
|
|
₩2,796.8
|
|
|
₩1,960.8
|
|
|
₩1,374.1
|
|
|
₩1,091.4
|
|
|
보기
|
|
|
₩969.8
|
|
|
₩1,018.4
|
|
|
₩983.4
|
|
|
₩969.8
|
|
최소: 1
배수: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
Reel, Cut Tape
|
|
|
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
₩5,259.2
-
1,900재고 상태
|
Mouser 부품 번호
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,900재고 상태
|
|
|
₩5,259.2
|
|
|
₩3,420
|
|
|
₩2,371.2
|
|
|
₩1,930.4
|
|
|
₩1,763.2
|
|
|
₩1,748
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Dual Anode Common Cathode
|
Si
|
20 A
|
100 V
|
650 mV
|
150 A
|
70 uA
|
+ 150 C
|
Reel, Cut Tape, MouseReel
|
|
|
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
₩4,332
-
2,000재고 상태
|
Mouser 부품 번호
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2,000재고 상태
|
|
|
₩4,332
|
|
|
₩2,796.8
|
|
|
₩2,006.4
|
|
|
₩1,672
|
|
|
₩1,447
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ30NL10SEFHTL
- ROHM Semiconductor
-
1:
₩5,122.4
-
1,244재고 상태
|
Mouser 부품 번호
755-YQ30NL10SEFHTL
|
ROHM Semiconductor
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,244재고 상태
|
|
|
₩5,122.4
|
|
|
₩3,344
|
|
|
₩2,310.4
|
|
|
₩1,869.6
|
|
|
₩1,793.6
|
|
|
₩1,687.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
30 A
|
100 V
|
780 mV
|
200 A
|
150 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
₩2,432
-
7,500주문 중
|
Mouser 부품 번호
755-YQ20BM10SDFHTL
|
ROHM Semiconductor
|
쇼트키 다이오드 및 정류기 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
|
|
7,500주문 중
주문 중:
2,500 예상 2026-05-27
5,000 예상 2026-08-12
|
|
|
₩2,432
|
|
|
₩1,717.6
|
|
|
₩1,393.8
|
|
|
₩1,085.3
|
|
|
₩1,004.7
|
|
|
₩939.4
|
|
최소: 1
배수: 1
:
2,500
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-252-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
150 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
대한민국