결과: 119
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장
Infineon Technologies MOSFET LOW POWER_NEW 159재고 상태
10,000주문 중
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 50 C + 150 C 73 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 1,558재고 상태
2,500예상 2026-10-01
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 196재고 상태
10,000주문 중
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 1,368재고 상태
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 6 A 1.2 Ohms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 52 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 6재고 상태
2,500예상 2027-02-18
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 14 A 450 mOhms - 20 V, 20 V 2.5 V 35 nC - 55 C + 150 C 104 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 46재고 상태
3,000예상 2026-10-15
최소: 1
배수: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 39 A 73 mOhms - 20 V, 20 V 3 V 51 nC - 40 C + 150 C 154 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 472재고 상태
6,000예상 2026-10-07
최소: 1
배수: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 85 mOhms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 137 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 3,365재고 상태
9,000예상 2026-10-01
최소: 1
배수: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 430재고 상태
9,000예상 2026-11-26
최소: 1
배수: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 4,613재고 상태
최소: 1
배수: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 4 A 1.15 Ohms - 16 V, 16 V 2.5 V 4.7 nC - 40 C + 150 C 6.2 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 1,465재고 상태
12,000예상 2026-10-08
최소: 1
배수: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 3 A 1.64 Ohms - 16 V, 16 V 2.5 V 3.8 nC - 40 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 1,518재고 상태
24,000주문 중
최소: 1
배수: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 1.5 A 3.8 Ohms - 20 V, 20 V 2.5 V 4 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 432재고 상태
75,000주문 중
최소: 1
배수: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 2 A 3.7 Ohms - 20 V, 20 V 2.5 V 6 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 951재고 상태
6,000주문 중
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 499재고 상태
500예상 2027-01-12
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,144재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 272재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 47재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 240재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 500재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET LOW POWER_NEW 113재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 1재고 상태
500예상 2026-12-10
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 53 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
8,876주문 중
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
7,000예상 2026-09-14
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
10,118예상 2026-12-03
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel