TJ80S04M3L,LXHQ
제품 사양을 참조하세요
제조업체:
설명:
MOSFET 100W 1MHz Automotive; AEC-Q101
재고 상태: 4,116
-
재고:
-
4,116 즉시 배송 가능예기치 않은 오류가 발생했습니다. 나중에 다시 시도하십시오.
가격 (KRW)
| 수량 | 단가 |
합계
|
|---|---|---|
| ₩3,241.2 | ₩3,241 | |
| ₩2,086.8 | ₩20,868 | |
| ₩1,409 | ₩140,900 | |
| ₩1,123.3 | ₩561,650 | |
| ₩1,044.9 | ₩1,044,900 | |
| 전체 릴(2000의 배수로 주문) | ||
| ₩994.6 | ₩1,989,200 | |
데이터시트
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
대한민국

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2