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제조업체:
설명:
MOSFET 68W 1MHz Automotive; AEC-Q101
MOSFET 68W 1MHz Automotive; AEC-Q101
데이터시트:
재고 상태: 3,902
-
재고:
-
3,902 즉시 배송 가능예기치 않은 오류가 발생했습니다. 나중에 다시 시도하십시오.
-
공장 리드 타임:
-
4 주 표시된 것보다 많은 수량에 대한 추정 공장 생산 시간입니다.
가격 (KRW)
| 수량 | 단가 |
합계
|
|---|---|---|
| ₩2,306.8 | ₩2,307 | |
| ₩1,547.6 | ₩15,476 | |
| ₩1,080.4 | ₩108,040 | |
| ₩852.6 | ₩426,300 | |
| ₩779.6 | ₩779,600 | |
| 전체 릴(2000의 배수로 주문) | ||
| ₩695 | ₩1,390,000 | |
| ₩630.7 | ₩2,522,800 | |
데이터시트
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2