STGP30M65DF2

STMicroelectronics
511-STGP30M65DF2
STGP30M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
60 A
258 W
- 55 C
+ 175 C
STGP30M65DF2
Tube
Brand: STMicroelectronics
Product Type: IGBTs
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
KRHTS:
8541299000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

In Stock: 14

Stock:
14
Can Ship Immediately
On Order:
1,000
Expected 12/25/2026
Factory Lead-Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₩-
Ext. Price:
₩-
Est. Tariff:

Pricing (KRW)

Qty. Unit Price
Ext. Price
₩5,865.6 ₩5,866
₩3,806.4 ₩38,064
₩2,667.6 ₩266,760
₩2,230.8 ₩1,115,400
₩2,074.8 ₩2,074,800
₩1,950 ₩3,900,000