MASTERGAN4

STMicroelectronics
511-MASTERGAN4
MASTERGAN4

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
QFN-31
2 Driver
3 Output
6.5 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 225 mOhms
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

In Stock: 112

Stock:
112 Can Ship Immediately
Factory Lead-Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 112 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₩-
Ext. Price:
₩-
Est. Tariff:

Pricing (KRW)

Qty. Unit Price
Ext. Price
₩14,040 ₩14,040
₩10,826.4 ₩108,264
₩10,030.8 ₩250,770
₩9,141.6 ₩914,160
₩8,283.6 ₩2,070,900
₩8,080.8 ₩4,040,400
₩7,597.2 ₩7,597,200
2,500 Quote

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